Nexperia · Transistors (BJTs) · MPN BCM857BV,115
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| Current - Collector Cutoff | 5uA |
|---|---|
| DC Current Gain | 200 |
| Pd - Power Dissipation | 300mW |
| Collector - Emitter Voltage VCEO | 45V |
| Emitter-Base Voltage VEBO | 5V |
| Transition frequency(fT) | 175MHz |
| Vce Saturation(VCE(sat)) | 400mV |
| type | PNP |
| Number | 2 PNP |
| Current - Collector(Ic) | 100mA |
| Operating Temperature | -65℃~+150℃ |
200 300mW 45V PNP 100mA SOT-666-6 Bipolar Transistor Arrays RoHS