Nexperia BCM857BSH-QX

Nexperia · Transistors (BJTs) · MPN BCM857BSH-QX

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Specifications

Current - Collector Cutoff5uA
Pd - Power Dissipation400mW
DC Current Gain450
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO7V
Transition frequency(fT)100MHz
Vce Saturation(VCE(sat))300mV
Current - Collector(Ic)100mA
Operating Temperature-55℃~+175℃

Technical details

400mW 450 45V 100mA TSSOP-6 Bipolar Transistor Arrays RoHS

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