Nexperia · Transistors (BJTs) · MPN BCM847QASZ
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| Current - Collector Cutoff | 15nA |
|---|---|
| DC Current Gain | 290 |
| Pd - Power Dissipation | 350mW |
| Collector - Emitter Voltage VCEO | 45V |
| Emitter-Base Voltage VEBO | 6V |
| Transition frequency(fT) | 100MHz |
| Vce Saturation(VCE(sat)) | 400mV |
| type | NPN |
| Number | 2 NPN |
| Current - Collector(Ic) | 100mA |
| Operating Temperature | -55℃~+150℃ |
290 350mW 45V NPN 100mA DFN-6(1x1) Bipolar Transistor Arrays RoHS