Nexperia BCM56DS

Nexperia · Transistors (BJTs) · MPN BCM56DS

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)155MHz
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation400mW
typeNPN
Number2 NPN
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

80V NPN 2 NPN 1A Single Bipolar Transistors RoHS

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