Nexperia BCM53DSF

Nexperia · Transistors (BJTs) · MPN BCM53DSF

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Specifications

Current - Collector Cutoff100nA
DC Current Gain63
Pd - Power Dissipation500mW
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO5V
Transition frequency(fT)140MHz
Vce Saturation(VCE(sat))500mV
typePNP
Number2 PNP
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃

Technical details

63 500mW 80V PNP 1A TSOP-6 Bipolar Transistor Arrays RoHS

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