Nexperia BC856S,115

Nexperia · Transistors (BJTs) · MPN BC856S,115

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Specifications

Current - Collector Cutoff15nA
DC Current Gain110
Collector - Emitter Voltage VCEO65V
Pd - Power Dissipation250mW
Emitter-Base Voltage VEBO5V
Transition frequency(fT)100MHz
Vce Saturation(VCE(sat))100mV
typePNP
Number2 PNP
Current - Collector(Ic)100mA
Operating Temperature-65℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 65V 100mA 100MHz 250mW TSSOP-6(SOT-363)

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