Nexperia · Transistors (BJTs) · MPN BC856BQB-QZ
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| Current - Collector Cutoff | 5uA |
|---|---|
| Transition frequency(fT) | 100MHz |
| Collector - Emitter Voltage VCEO | 65V |
| DC Current Gain | 475 |
| Emitter-Base Voltage VEBO | 6V |
| Pd - Power Dissipation | 420mW |
| Number | 1 PNP |
| type | PNP |
| Current - Collector(Ic) | 100mA |
| Vce Saturation(VCE(sat)) | 650mV |
| Operating Temperature | -55℃~+150℃ |
65V 475 1 PNP PNP 100mA DFN-3(1x1.1) Single Bipolar Transistors RoHS