Nexperia BC856BMYL

Nexperia · Transistors (BJTs) · MPN BC856BMYL

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO6V
DC Current Gain220
Pd - Power Dissipation250mW
Number1 PNP
typePNP
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))400mV

Technical details

60V 220 1 PNP PNP 100mA DFN-3(1x0.6) Single Bipolar Transistors RoHS

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