Nexperia BC847RAZ

Nexperia · Transistors (BJTs) · MPN BC847RAZ

No reviews yet — be the first to review Nexperia BC847RAZ.

Specifications

Current - Collector Cutoff15nA
DC Current Gain300
Pd - Power Dissipation480mW
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO6V
Transition frequency(fT)100MHz
Vce Saturation(VCE(sat))300mV
typeNPN
Number2 NPN
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃

Technical details

300 480mW 45V NPN 100mA DFN-6-EP(1.4x1.2) Bipolar Transistor Arrays RoHS

Related Transistors (BJTs)