Nexperia BC847QASZ

Nexperia · Transistors (BJTs) · MPN BC847QASZ

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Specifications

Current - Collector Cutoff15nA
DC Current Gain200
Pd - Power Dissipation350mW
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO6V
Transition frequency(fT)100MHz
Vce Saturation(VCE(sat))300mV
typeNPN
Number2 NPN
Current - Collector(Ic)200mA
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 45V 200mA 100MHz 350mW Surface Mount DFN-6(1x1)

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