Nexperia BC847QAPNZ

Nexperia · Transistors (BJTs) · MPN BC847QAPNZ

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Specifications

Current - Collector Cutoff5uA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO6V
DC Current Gain200
Pd - Power Dissipation350mW
Number1 NPN + 1 PNP
typeNPN+PNP
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))100mV

Technical details

Bipolar (BJT) Transistor NPN+PNP 45V 100mA 100MHz 350mW Surface Mount DFN-6(1x1)

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