Nexperia BC847DS,115

Nexperia · Transistors (BJTs) · MPN BC847DS,115

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Specifications

Current - Collector Cutoff15nA
DC Current Gain200
Pd - Power Dissipation380mW
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO6V
Transition frequency(fT)100MHz
Vce Saturation(VCE(sat))200mV
typeNPN
Number2 NPN
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 380mW Surface Mount SC-74

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