Nexperia BC847BPN-QX

Nexperia · Transistors (BJTs) · MPN BC847BPN-QX

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Specifications

Current - Collector Cutoff15nA
Pd - Power Dissipation400mW
DC Current Gain200
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
Transition frequency(fT)100MHz
Vce Saturation(VCE(sat))100mV
typeNPN+PNP
Number1 NPN + 1 PNP
Current - Collector(Ic)100mA
Operating Temperature-65℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN+PNP 45V 100mA 100MHz 400mW Surface Mount SOT-323-6

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