Nexperia BC847A-QR

Nexperia · Transistors (BJTs) · MPN BC847A-QR

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Specifications

Current - Collector Cutoff5uA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO45V
DC Current Gain180
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation250mW
Number1 NPN
typeNPN
Current - Collector(Ic)100mA
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))200mV

Technical details

45V 180 1 NPN NPN 100mA TSSOP-6 Single Bipolar Transistors RoHS

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