Nexperia BC817RAPNZ

Nexperia · Transistors (BJTs) · MPN BC817RAPNZ

No reviews yet — be the first to review Nexperia BC817RAPNZ.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz;80MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
DC Current Gain160
Pd - Power Dissipation500mW
Number1 NPN + 1 PNP
typeNPN+PNP
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))700mV

Technical details

45V 160 1 NPN + 1 PNP NPN+PNP 500mA DFN-6-EP(1.4x1.2) Single Bipolar Transistors RoHS

Related Transistors (BJTs)