Nexperia BC817DS-QX

Nexperia · Transistors (BJTs) · MPN BC817DS-QX

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Specifications

Current - Collector Cutoff100nA
DC Current Gain400
Pd - Power Dissipation370mW
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
Transition frequency(fT)100MHz
typeNPN
Vce Saturation(VCE(sat))700mV
Number2 NPN
Current - Collector(Ic)500mA
Operating Temperature-65℃~+150℃

Technical details

400 370mW 45V NPN 500mA TSOP-6 Bipolar Transistor Arrays RoHS

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