Nexperia BC817DS,115

Nexperia · Transistors (BJTs) · MPN BC817DS,115

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Specifications

Current - Collector Cutoff100nA
DC Current Gain160
Pd - Power Dissipation370mW
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
Transition frequency(fT)100MHz
Vce Saturation(VCE(sat))700mV
typeNPN
Number2 NPN
Current - Collector(Ic)500mA
Operating Temperature-65℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 45V 500mA 100MHz 370mW Surface Mount SC-74(TSOP-6)

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