Nexperia BC817DPN,125

Nexperia · Transistors (BJTs) · MPN BC817DPN,125

No reviews yet — be the first to review Nexperia BC817DPN,125.

Specifications

Current - Collector Cutoff5uA
DC Current Gain160
Pd - Power Dissipation370mW
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
Transition frequency(fT)100MHz
Vce Saturation(VCE(sat))700mV
typeNPN+PNP
Number1 NPN + 1 PNP
Current - Collector(Ic)500mA
Operating Temperature-65℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN+PNP 45V 500mA 100MHz 370mW Surface Mount SC-74

Related Transistors (BJTs)