Nexperia BC807RAZ

Nexperia · Transistors (BJTs) · MPN BC807RAZ

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
DC Current Gain160
Pd - Power Dissipation500mW
Number2 PNP
typePNP
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))700mV

Technical details

45V 160 2 PNP PNP 500mA DFN-6-EP(1.4x1.2) Single Bipolar Transistors RoHS

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