Nexperia BC807RA147

Nexperia · Transistors (BJTs) · MPN BC807RA147

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation350mW
typePNP
Number2 PNP
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))700mV
Operating Temperature-55℃~+150℃

Technical details

45V PNP 2 PNP 500mA DFN1412-6 Single Bipolar Transistors RoHS

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