Nexperia BC807K-40R

Nexperia · Transistors (BJTs) · MPN BC807K-40R

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
DC Current Gain250
Pd - Power Dissipation600mW
typePNP
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))700mV

Technical details

Bipolar (BJT) Transistor PNP 45V 500mA 80MHz 600mW Surface Mount SOT-23-3

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