Nexperia BC807-40-QR

Nexperia · Transistors (BJTs) · MPN BC807-40-QR

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO45V
DC Current Gain600
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation345mW
Number1 PNP
typePNP
Current - Collector(Ic)500mA
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))700mV

Technical details

45V 600 1 PNP PNP 500mA SOT-23 Single Bipolar Transistors RoHS

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