MSKSEMI MMDT5401

MSKSEMI · Transistors (BJTs) · MPN MMDT5401

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO150V
DC Current Gain300
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation200mW
Number2 PNP
typePNP
Current - Collector(Ic)200mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor PNP 150V 0.2A 100MHz 0.2W Surface Mount SOT-363

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