MSKSEMI MMDT3052DW

MSKSEMI · Transistors (BJTs) · MPN MMDT3052DW

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain240
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation150mW
Number2 NPN
typeNPN
Current - Collector(Ic)200mA
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor NPN 50V 200mA 200MHz 150mW Surface Mount SOT-363

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