MSKSEMI MMBT3906M

MSKSEMI · Transistors (BJTs) · MPN MMBT3906M

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Pd - Power Dissipation100mW
Number1 PNP
typePNP
Current - Collector(Ic)200mA
Vce Saturation(VCE(sat))300mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 40V 200mA 100mW Surface Mount SOT-723

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