MSKSEMI MJD41C(MS)

MSKSEMI · Transistors (BJTs) · MPN MJD41C(MS)

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Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)3MHz
Collector - Emitter Voltage VCEO100V
DC Current Gain75
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation1.25W
Number1 NPN
typeNPN
Current - Collector(Ic)9A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))1.5V

Technical details

Bipolar (BJT) Transistor NPN 100V 9A 3MHz 1.25W Surface Mount TO-252

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