MSKSEMI MJD127(MS)

MSKSEMI · Transistors (BJTs) · MPN MJD127(MS)

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Specifications

Current - Collector Cutoff10uA
Collector - Emitter Voltage VCEO100V
DC Current Gain12000
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation1.5W
Number1 PNP
typePNP
Current - Collector(Ic)8A
Vce Saturation(VCE(sat))4V
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 100V 8A 1.5W Surface Mount TO-252

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