MSKSEMI · Transistors (BJTs) · MPN MJD122(MS)
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| Current - Collector Cutoff | 10uA |
|---|---|
| Collector - Emitter Voltage VCEO | 100V |
| DC Current Gain | 12000 |
| Emitter-Base Voltage VEBO | 5V |
| Pd - Power Dissipation | 1.25W |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 6A |
| Vce Saturation(VCE(sat)) | 4V |
| Operating Temperature | -55℃~+150℃ |
Bipolar (BJT) Transistor NPN 100V 6A 1.25W Surface Mount TO-252