MSKSEMI FZT955-MS

MSKSEMI · Transistors (BJTs) · MPN FZT955-MS

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)110MHz
Collector - Emitter Voltage VCEO140V
DC Current Gain300
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation3W
Number1 PNP
typePNP
Current - Collector(Ic)4A
Vce Saturation(VCE(sat))370mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 140V 4A 110MHz 3W Surface Mount SOT-223

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