MSKSEMI FMMT618

MSKSEMI · Transistors (BJTs) · MPN FMMT618

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO20V
DC Current Gain300
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation350mW
Number1 NPN
typeNPN
Current - Collector(Ic)2.5A
Vce Saturation(VCE(sat))200mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 20V 2.5A 350mW Surface Mount SOT-23

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