MSKSEMI DTC143ZE-MS

MSKSEMI · Transistors (BJTs) · MPN DTC143ZE-MS

No reviews yet — be the first to review MSKSEMI DTC143ZE-MS.

Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO50V
DC Current Gain200
Vce Saturation(VCE(sat))250mV
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Input Resistor4.7kΩ
typeNPN
Resistor Ratio0.1
Number1 NPN (Pre-Biased)
Pd - Power Dissipation150mW

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 50V 100mA 150mW Surface Mount SOT-523

Related Transistors (BJTs)