MSKSEMI DTC124EE-MS

MSKSEMI · Transistors (BJTs) · MPN DTC124EE-MS

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO50V
DC Current Gain100
Vce Saturation(VCE(sat))250mV
Current - Collector(Ic)100mA
Input Resistor28.6kΩ
typeNPN
Resistor Ratio1
Number1 NPN (Pre-Biased)
Pd - Power Dissipation150mW

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 50V 100mA 150mW Surface Mount SOT-523

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