MSKSEMI DTA114YE-MS

MSKSEMI · Transistors (BJTs) · MPN DTA114YE-MS

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Specifications

Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain68
Current - Collector(Ic)100mA
Output Voltage(VO(on))300mV@5mA,0.25mA
Input Resistor13kΩ
typePNP
Resistor Ratio10
Number1 PNP Pre-Biased
Pd - Power Dissipation150mW
Voltage - Input(Max)(VI(off))300mV@100uA,5V
Input Voltage (VI(on)@Ic,Vce)1.4V@1mA,0.3V

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased 50V 100mA 150mW Surface Mount SOT-523

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