MSKSEMI DTA114EE(MS)

MSKSEMI · Transistors (BJTs) · MPN DTA114EE(MS)

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Specifications

Transition frequency(fT)250MHz
DC Current Gain30
Current - Collector(Ic)100mA
Output Voltage(VO(on))300mV
Input Resistor13kΩ
Number1 PNP Pre-Biased
typePNP
Resistor Ratio1
Pd - Power Dissipation150mW
Input Voltage (VI(on)@Ic,Vce)3V
Voltage - Input(Max)(VI(off))500mV@0.1mA,5V

Technical details

Pre-Biased Bipolar Transistor (BJT) 150mW Surface Mount SOT-523

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