MSKSEMI BC847S

MSKSEMI · Transistors (BJTs) · MPN BC847S

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation200mW
Number2 NPN
typeNPN
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))650mV

Technical details

Bipolar (BJT) Transistor NPN 45V 100mA 200MHz 200mW Surface Mount SOT-363

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