MSKSEMI BC847BW

MSKSEMI · Transistors (BJTs) · MPN BC847BW

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO6V
DC Current Gain200
Pd - Power Dissipation150mW
Number1 NPN
typeNPN
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))600mV

Technical details

45V 200 1 NPN NPN 100mA SOT-323 Single Bipolar Transistors RoHS

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