MSKSEMI BC846S

MSKSEMI · Transistors (BJTs) · MPN BC846S

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO65V
Emitter-Base Voltage VEBO6V
DC Current Gain600
Pd - Power Dissipation200mW
Configuration-
Number2 NPN
typeNPN
Current - Collector(Ic)100mA
Operating Temperature-
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor NPN+PNP 65V 0.1A 100MHz 200mW Surface Mount SOT-363

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