MSKSEMI BC846PN

MSKSEMI · Transistors (BJTs) · MPN BC846PN

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO65V
Emitter-Base Voltage VEBO6V
DC Current Gain200
Pd - Power Dissipation200mW
Number1 NPN + 1 PNP
typeNPN+PNP
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))650mV

Technical details

Bipolar (BJT) Transistor NPN+PNP 65V 100mA 200mW Surface Mount SOT-363

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