MSKSEMI 2SB772

MSKSEMI · Transistors (BJTs) · MPN 2SB772

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO30V
DC Current Gain320
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation1.25W
Number1 PNP
typePNP
Current - Collector(Ic)3A
Vce Saturation(VCE(sat))500mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 30V 3A 1.25W Surface Mount TO-252-2

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