MSKSEMI 2SA1013-Y-MS

MSKSEMI · Transistors (BJTs) · MPN 2SA1013-Y-MS

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)15MHz
Collector - Emitter Voltage VCEO160V
Emitter-Base Voltage VEBO6V
DC Current Gain320
Pd - Power Dissipation500mW
Number1 PNP
typePNP
Current - Collector(Ic)1A
Vce Saturation(VCE(sat))1.5V

Technical details

160V 320 1 PNP PNP 1A SOT-89 Single Bipolar Transistors RoHS

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