MOT 5551/G1

MOT · Transistors (BJTs) · MPN 5551/G1

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO160V
Emitter-Base Voltage VEBO6V
DC Current Gain400
Pd - Power Dissipation350mW
Number1 NPN
typeNPN
Current - Collector(Ic)600mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))150mV

Technical details

Bipolar (BJT) Transistor NPN 160V 600mA 300MHz 0.35W Surface Mount SOT-23

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