micron · Memory ICs · MPN NAND512R3A2CZA6E
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| Memory Size | 512Mbit |
|---|---|
| Voltage - Supply | 1.7V~1.95V |
| Operating temperature | -40℃~+85℃ |
| Program / Erase Cycles | 100,000 cycles |
| Clock Frequency | - |
| Features | Copy back write function;Bad block management function;ECC error correction function;Hardware write protection function… |
| Data Retention - TDR (Year) | 10 years |
| Block Erase Time(tBE) | 2ms |
| Write Cycle Time(tWC) | - |
| Page Programming Time (Tpp) | 50ns |
| Standby Supply Current | 100uA |
| Interface | Parallel |
512Mbit 1.7V~1.95V Parallel VFBGA-63(9x11) Memory (ICs) RoHS