micron · Memory ICs · MPN NAND32GW3F4AN6E
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| Voltage - Supply | 2.7V~3.6V |
|---|---|
| Memory Size | 32Gbit |
| Operating temperature | -40℃~+85℃ |
| Program / Erase Cycles | 100,000 cycles |
| Clock Frequency | - |
| Features | Copy back write function;Bad block management function;Hardware write protection function;Power lock protection functio… |
| Data Retention - TDR (Year) | 10 years |
| Block Erase Time(tBE) | 1.5ms |
| Write Cycle Time(tWC) | - |
| Page Programming Time (Tpp) | 50ns |
| Standby Supply Current | - |
| Interface | Parallel |
2.7V~3.6V 32Gbit Parallel TSOP-48 Memory (ICs) RoHS