micron · Memory ICs · MPN NAND16GW3F2AN6E
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| Voltage - Supply | 2.7V~3.6V |
|---|---|
| Memory Size | 16Gbit |
| Operating temperature | - |
| Program / Erase Cycles | 100,000 cycles |
| Clock Frequency | - |
| Features | Read buffer function;Copy back write function;Hardware reset function;Bad block management function;Hardware write prot… |
| Data Retention - TDR (Year) | - |
| Block Erase Time(tBE) | 1.5ms |
| Write Cycle Time(tWC) | - |
| Page Programming Time (Tpp) | 500us |
| Interface | - |
| Standby Supply Current | - |
2.7V~3.6V 16Gbit TSOP-48 Memory (ICs) RoHS