micron · Memory ICs · MPN NAND16GW3D2BN6E
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| Memory Size | 16Gbit |
|---|---|
| Voltage - Supply | 2.7V~3.6V |
| Operating temperature | -40℃~+85℃ |
| Program / Erase Cycles | 5,000 cycles |
| Clock Frequency | - |
| Features | Read buffer function;Copy back write function;Hardware write protection function;ECC error correction function;Bad bloc… |
| Data Retention - TDR (Year) | 5 Years |
| Block Erase Time(tBE) | 2.5ms |
| Write Cycle Time(tWC) | - |
| Page Programming Time (Tpp) | 800us |
| Interface | - |
| Standby Supply Current | 10uA |
16Gbit 2.7V~3.6V TSOP-48 Memory (ICs) RoHS