micron · Memory ICs · MPN NAND08GW3F2AN6E
No reviews yet — be the first to review micron NAND08GW3F2AN6E.
| Memory Size | 8Gbit |
|---|---|
| Voltage - Supply | 2.7V~3.6V |
| Operating temperature | -40℃~+85℃ |
| Program / Erase Cycles | 100,000 cycles |
| Clock Frequency | - |
| Features | Read buffer function;Copy back write function;Hardware reset function;Bad block management function;Hardware write prot… |
| Data Retention - TDR (Year) | - |
| Block Erase Time(tBE) | 1.5ms |
| Write Cycle Time(tWC) | - |
| Page Programming Time (Tpp) | 25ns |
| Standby Supply Current | - |
| Interface | Parallel |
8Gbit 2.7V~3.6V Parallel TSOP-48 Memory (ICs) RoHS