micron NAND04GW3C2BN6E

micron · Memory ICs · MPN NAND04GW3C2BN6E

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Specifications

Voltage - Supply2.7V~3.6V
Memory Size4Gbit
Operating temperature-40℃~+85℃
Page Programming Time (Tpp)25ns
InterfaceParallel

Technical details

2.7V~3.6V 4Gbit Parallel TSOP-48 Memory (ICs) RoHS

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