micron · Memory ICs · MPN NAND04GR3B2DN6E
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| Voltage - Supply | 1.7V~1.95V |
|---|---|
| Memory Size | 4Gbit |
| Operating temperature | - |
| Program / Erase Cycles | 100,000 cycles |
| Clock Frequency | - |
| Features | Read buffer function;Copy back write function;Bad block management function;ECC error correction function;Hardware writ… |
| Data Retention - TDR (Year) | - |
| Block Erase Time(tBE) | 1.5ms |
| Page Programming Time (Tpp) | 200us |
| Write Cycle Time(tWC) | - |
| Interface | - |
| Standby Supply Current | 10uA |
1.7V~1.95V 4Gbit TSOP-48 Memory (ICs) RoHS