micron · Memory ICs · MPN NAND01GR3B2CZA6E
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| Voltage - Supply | 1.7V~1.95V |
|---|---|
| Memory Size | 1Gbit |
| Operating temperature | -40℃~+85℃ |
| Program / Erase Cycles | - |
| Clock Frequency | - |
| Features | Read buffer function;Copy back write function;Hardware write protection function;Bad block management function;ECC erro… |
| Data Retention - TDR (Year) | - |
| Block Erase Time(tBE) | - |
| Write Cycle Time(tWC) | - |
| Page Programming Time (Tpp) | 25ns |
| Standby Supply Current | - |
| Interface | Parallel |
1.7V~1.95V 1Gbit Parallel FBGA-63(9.5x12) Memory (ICs) RoHS