micron · Memory ICs · MPN NAND01GR3B2BZA6E
No reviews yet — be the first to review micron NAND01GR3B2BZA6E.
| Voltage - Supply | 1.7V~1.95V |
|---|---|
| Memory Size | 1Gbit |
| Operating temperature | -40℃~+85℃ |
| Program / Erase Cycles | 100,000 cycles |
| Clock Frequency | - |
| Features | Read buffer function;Copy back write function;Hardware write protection function;ECC error correction function;Bad bloc… |
| Data Retention - TDR (Year) | - |
| Block Erase Time(tBE) | - |
| Write Cycle Time(tWC) | - |
| Page Programming Time (Tpp) | 30ns |
| Standby Supply Current | 100uA |
| Interface | Parallel |
1.7V~1.95V 1Gbit Parallel VFBGA-63(9x11) Memory (ICs) RoHS